Engineering the band gap of SiC nanotubes with a transverse electric field
نویسندگان
چکیده
منابع مشابه
Modulating Band Gap and HOCO/LUCO Energy of Boron-Nitride Nanotubes under a Uniform External Electric Field
In this study, spectroscopic properties of the single-walled boron-nitride nanotube (SWBNNT) –a semiconductor channel in molecular diodes and molecular transistors–have been investigated under field-free and various applied electric fields by first principle methods.Our analysis shows that increasing the electric field in boron-nitride nanotube (BNNT) decreases the Highest Occupied Crystal Orbi...
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– We propose a method to modulate the bandgaps in narrow-gap carbon nanotubes using a transverse electric field. Unlike previous investigations, we include curvature effects of the nanotubes by incorporating both πand σ-orbitals in our tight-binding calculations. The calculations show that the narrow curvature-induced bandgaps decrease quadratically with electric field amplitude to zero. As the...
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O. Gülseren, T. Yildirim, S. Ciraci, and Ç. Kılıç* NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 Department of Physics, Bilkent University, Ankara 06533, Turkey ~Received 18 April 2001; revised manuscript received 11 Decem...
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We introduce two simple models to study the effect of a spatially localized transverse electric field on the lowenergy electronic structure of semiconducting carbon nanotubes. Starting from the Dirac Hamiltonian for the low-energy states of a carbon nanotube, we use scattering theory to show that an arbitrarily weak field leads to the formation of localized electronic states inside the free nan...
متن کاملBandgap modulation of quasi-metallic carbon nanotubes in a transverse electric field
– We propose a method to modulate the bandgaps in quasi-metallic carbon nanotubes using a transverse electric field. Unlike previous investigations, we include curvature effects of the nanotubes by incorporating both πand σ-orbitals in our tight-binding calculations. The calculations show that the small curvature-induced bandgaps decrease quadratically with electric field amplitude to zero. As ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3469944